Hybrid phase-shift mask
US6623895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Apr 29, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/34
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one non-critical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.