Passivated magneto-resistive bit structure and passivation method therefor
US6623987B2 · kind B2 · utility
4Cited by
31References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2002 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Jan 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.