Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
US6624064B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1997 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Feb 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.