Ming Xi
75Patents
32h-index
104Co-inventors
91Inventor score
Filing activity: Jul 12, 1996 → Jul 6, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6624064B1 | Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application | Electricity | 534 | Expired |
| US5837058A | High temperature susceptor | Chemistry; Metallurgy | 505 | Expired |
| US6551929B1 | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques | Electricity | 286 | Expired |
| US6797340B2 | Method for depositing refractory metal layers employing sequential deposition techniques | Chemistry; Metallurgy | 145 | Expired |
| US7211144B2 | Pulsed nucleation deposition of tungsten layers | Chemistry; Metallurgy | 137 | Expired |
| US6660126B2 | Lid assembly for a processing system to facilitate sequential deposition techniques | Electricity | 111 | Expired |
| US6846516B2 | Multiple precursor cyclical deposition system | Chemistry; Metallurgy | 110 | Expired |
| US6998014B2 | Apparatus and method for plasma assisted deposition | Electricity | 93 | Expired |
| US6939804B2 | Formation of composite tungsten films | Electricity | 90 | Expired |
| US6734020B2 | Valve control system for atomic layer deposition chamber | Emerging Cross-Sectional Technologies | 89 | Expired |
| US6809026B2 | Selective deposition of a barrier layer on a metal film | Electricity | 89 | Expired |
| US7405158B2 | Methods for depositing tungsten layers employing atomic layer deposition techniques | Electricity | 87 | Expired |
| US6951804B2 | Formation of a tantalum-nitride layer | Electricity | 87 | Expired |
| US7026238B2 | Reliability barrier integration for Cu application | Electricity | 78 | Expired |
| US6866746B2 | Clamshell and small volume chamber with fixed substrate support | Electricity | 75 | Expired |
| US5849092A | Process for chlorine trifluoride chamber cleaning | Emerging Cross-Sectional Technologies | 66 | Expired |
| US6720027B2 | Cyclical deposition of a variable content titanium silicon nitride layer | Emerging Cross-Sectional Technologies | 65 | Expired |
| US6911391B2 | Integration of titanium and titanium nitride layers | Electricity | 59 | Expired |
| US7175713B2 | Apparatus for cyclical deposition of thin films | Electricity | 59 | Expired |
| US6211065A | Method of depositing and amorphous fluorocarbon film using HDP-CVD | Chemistry; Metallurgy | 55 | Expired |
| US7094680B2 | Formation of a tantalum-nitride layer | Electricity | 48 | Expired |
| US7101795B1 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer | Electricity | 43 | Expired |
| US7279432B2 | System and method for forming an integrated barrier layer | Electricity | 41 | Expired |
| US7465666B2 | Method for forming tungsten materials during vapor deposition processes | Electricity | 39 | Active |
| US6214714A | Method of titanium/titanium nitride integration | Electricity | 38 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.