Systems and methods for two-sided etch of a semiconductor substrate
US6624082B2 · kind B2 · utility
7Cited by
38References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Jul 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32633
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.