Method of forming plasma nitrided gate dielectric layers
US6624090B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2002 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | May 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a thin silicon dioxide gate dielectric layer comprised with a nitrided silicon dioxide component, obtained via a plasma nitrogen procedure performed to a base silicon dioxide layer, has been developed. The silicon dioxide gate dielectric layer, comprised with a top portion of nitrided silicon dioxide, allows lower leakage currents to be realized when compared to non-nitrided silicon dioxide counterparts. To prevent nitrogen ions or radicals from penetrating the base silicon dioxide layer during the plasma nitrogen procedure, silicon oxynitride components are formed in the base silicon dioxide layer either during the growth procedures using N2O, NO or N2O/NO as reactants, or via a post growth anneal procedure, using an anneal ambient comprised of either N2O, NO, or N2O/NO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.