Highly polar cleans for removal of residues from semiconductor structures
US6624127B1 · kind B1 · utility
9Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The Supercritical carbon dioxide may include an ionic liquid in one embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.