Semiconductor device and method for manufacturing the same
US6624504B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Oct 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes a semiconductor device having circuit electrodes aligned centrally of the semiconductor apparatus. A first electrically insulating layer is formed on said semiconductor device with said circuit electrodes being exposed from said first insulating layer. A second electrically insulating layer is formed on said first insulating layer, and external connection terminals are formed on said second insulating layer. A wiring is formed on said second insulating layer to electrically connect said external connect terminals to said circuit electrodes of said semiconductor device, and a third electrically insulating layer is formed on said second insulating layer and on said wiring. Particles are provided in the second insulating layer to control a shape of said second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.