Methods and apparatus for forming a film on a substrate
US6627535B2 · kind B2 · utility
18Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2001 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | May 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k≦3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.