Continuous, non-agglomerated adhesion of a seed layer to a barrier layer
US6627542B1 · kind B1 · utility
28Cited by
32References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2000 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus is provided for improving adherence of metal seed layers to barrier layers in electrochemical deposition techniques. The method includes depositing an adhesion layer continuously or semi-continuously without agglomeration onto a barrier layer prior to depositing a seed layer by controlling the substrate temperature, the chamber pressure, and/or the power delivered to a deposition chamber. Deposition of the adhesion layer prevents layer delamination which leads to agglomeration of the deposited layers and formation of voids in the high aspect ratio features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.