Post-planarization clean-up
US6627550B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2001 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Mar 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Cleaning solutions and methods for removing residuals from the surface of an integrated circuit device. Such solutions and methods find particular application in the fabrication of a dual damascene structure following removal of excess portions of a silver-containing metal layer from a device surface. The cleaning solutions and methods facilitate removal of particulate residuals as well as unremoved portions of the metal layer in a single cleaning process. The cleaning solutions are dilute aqueous solutions containing hydrogen peroxide and at least one acidic component and are substantially free of particulate material. Acidic components include carboxylic acids and their salts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.