Hybrid IGBT and MOSFET for zero current at zero voltage

US6627961B1 · kind B1 · utility

Assignee

• International Rectifier Corporation · US

Inventors

• Richard Francis · Manhattan Beach, US
• Ranadeep Dutta · Del Mar, US
• Chiu Ng · El Segundo, US
• Peter Wood · Murrysville, US

Key dates

• Filing date: May 5, 2000
• Grant date: Sep 30, 2003
• Expiry date: May 5, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/441

Abstract

A high voltage MOSgated semiconductor device has a generally linear MOSFET type forward current versus forward voltage characteristic at low voltage and the high current, low forward drop capability of an IGBT. The device is particularly useful as the control transistor for a television tube deflection coil. The device is formed by a copacked discrete IGBT die and power MOSFET die in which the ratio of the MOSFET die area is preferably about 25% that of the IGBT. Alternatively, the IGBT and MOSFET can be integrated into the same die, with the IGBT and MOSFET elements alternating laterally with one another and overlying respective P+ injection regions and N+ contact regions respectively on the bottom of the die. The MOSFET and IGBT elements are preferably spaced apart by a distance of about 1 minority carrier length (50-100 microns for a 1500 volt device).