CVD syntheses of silicon nitride materials
US6630413B2 · kind B2 · utility
113Cited by
19References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 26, 2001 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | May 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low hydrogen-content silicon nitride materials are deposited by a variety of CVD techniques, preferably thermal CVD and PECVD, using chemical precursors that contain silicon atoms, nitrogen atoms, or both. A preferred chemical precursor contains one or more N—Si bonds. Another preferred chemical precursor is a mixture of a N-containing chemical precursor with a Si-containing chemical precursor that contains less than 9.5 weight % hydrogen atoms. A preferred embodiment uses a hydrogen source to minimize the halogen content of silicon nitride materials deposited by PECVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.