High-voltage semiconductor component

US6630698B1 · kind B1 · utility

Assignee

• Infineon Inc. · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Dirk Ahlers · Hersbruck, DE
• Helmut Strack · Hersbruck, DE
• Michael Rueb · Faak am See, AT
• Hans Weber · Villach, AT

Key dates

• Filing date: Nov 9, 2001
• Grant date: Oct 7, 2003
• Expiry date: Nov 9, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner. In the semiconductor body said semiconductor areas extend from at least one first zone (6) to near a second zone (1) and are variably doped so that the electric field increases progressively from one zone to the other (6, 1)