Laser diode using group III nitride group compound semiconductor
US6631149B1 · kind B1 · utility
12Cited by
15References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 16, 2000 |
| Grant date | Oct 7, 2003 |
| Priority date | — |
| Expiry date | Oct 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A guide layer is formed to have a superlattice structure comprising five pairs of layers of AlGaN and InN, each having a thickness of about 10 nm. The guide layer has a total thickness of about 0.1 &mgr;m. The guide layer so structured has a reduced elastic constant such that the guide layer acts as a stress relieving layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.