Method for cleaning copper surfaces
US6632288B2 · kind B2 · utility
1Cited by
23References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Mar 23, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for cleaning a copper surface of a semiconductor wafer or article, nitrogen gas is bubbled or dissolved into a strong alkaline solution, displacing dissolved oxygen from the solution. A nitrogen gas environment is provided over the copper surface. The alkaline solution is then applied to the copper surface. The copper etch rate is greatly reduced. The method is useful in removing residual polishing slurry after a chemical-mechanical polishing step, and for removing residues left in via holes after plasma etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.