Film formation method and film formation apparatus
US6632726B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Aug 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To perform a film formation process, source RF power is applied to a coil to generate a plasma in a processing chamber. Subsequently, O2 gas and SiH4 gas are introduced into the processing chamber. Bias RF power is then applied to a support member to cause permeation of a wafer W by the plasma. At the end of the film formation, the application of the bias RF power to the support member is stopped while the O2 gas and the SiH4 gas are kept introduced into the processing chamber. After that, the introduction of the SiH4 gas is stopped, and the introduction of the O2 gas is also stopped. Then, the application of the source RF power to the coil is stopped. This can reduce plasma damage to the substrate to be processed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.