SOI substrate, a semiconductor circuit formed in a SOI substrate, and an associated production method

US6633061B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jorn Lutzen · Dresden, DE
• Bernhard Sell · Dresden, DE

Key dates

• Filing date: Aug 27, 2001
• Grant date: Oct 14, 2003
• Expiry date: Aug 27, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/00
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a SOI substrate, a semiconductor circuit formed in a SOI substrate, and an associated production method, a multilayer barrier layer with a potential barrier and a diffusion barrier is used to reliably prevent diffusion of impurities between element layers. This allows semiconductor circuits to be produced with smaller structure sizes and with a higher integration density.