Use of disposable spacer to introduce gettering in SOI layer

US6635517B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Tze-Chiang Chen · Yorktown Heights, US
• Thomas T. Hwang · Wappingers Falls, US
• Mukesh V. Khare · White Plains, US
• Effendi Leobandung · Stormville, US
• Anda C. Mocuta · Hopewell Junction, US
• Paul A. Ronsheim · Hopewell Junction, US
• Ghavam G. Shahidi · Pound Ridge, US

Key dates

• Filing date: Aug 7, 2001
• Grant date: Oct 21, 2003
• Expiry date: Aug 7, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26506
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a self-aligned gettering region within an SOI substrate is provided. Specifically, the inventive method includes the steps of forming a disposable spacer on each vertical sidewall of a patterned gate stack region, the patterned gate stack region being formed on a top Si-containing layer of an SOI substrate; implanting gettering species into the top Si-containing layer not protected by the disposable spacer and patterned gate stack region; and removing the disposable spacer and annealing the implanted gettering species so as to convert said species into a gettering region.