SOI hybrid structure with selective epitaxial growth of silicon

US6635543B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Jack A. Mandelman · Stormville, US
• Dan Moy · Bethel, US
• Byeongju Park · Poughkeepsie, US
• William R. Tonti · South Burlington, US

Key dates

• Filing date: Dec 31, 2002
• Grant date: Oct 21, 2003
• Expiry date: Dec 31, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method and structure for selectively growing epitaxial silicon in a trench formed within a silicon-on-insulator (SOI) structure. The SOI structure includes a buried oxide layer (BOX) on a bulk silicon substrate, and a silicon layer on the BOX. A pad layer is formed on the silicon layer. The pad layer includes a pad nitride (e.g., silicon nitride) on a pad oxide (e.g., silicon dioxide), and the pad oxide has been formed on the silicon layer. A trench is formed by anisotropically etching through the pad layer, the silicon layer, the BOX, and to a depth within the bulk silicon substrate. Insulative spacers are formed on sidewalls of the trench. An epitaxial silicon layer is grown in the trench from a bottom of the trench to above the pad layer. The pad layer and portions of the epitaxial layer are removed (e.g., by chemical mechanical polishing), resulting in a planarized top surface of the epitaxial layer that is about coplanar with a top surface of the silicon layer. Electronic devices may be formed within the epitaxial silicon of the trench. Such electronic devices may include dynamic random access memory (DRAM), bipolar transistors, Complementary Metal Oxide Semiconductor (CMOS)…