Method of preventing autodoping
US6635556B1 · kind B1 · utility
19Cited by
25References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | May 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/916
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a silicon-based electronic device is provided. The method includes, for example, the steps of forming a doped silicon layer on a surface of a substrate material and forming an undoped silicon capping layer on the doped silicon layer. The thin “capping” layers of undoped silicon prevent outgassing of the dopants underneath the cap. In this manner, the next deposition of doped silicon is not subject to autodoping by the previous doped silicon deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.