Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system
US6635577B1 · kind B1 · utility
3Cited by
13References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1999 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Mar 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of eliminating charging resulting from plasma processing a semiconductor wafer comprising the steps of plasma processing the semiconductor wafer in a manner that may result in topographically dependent charging and exposing, during at least a portion of a time in which the semiconductor wafer is being plasma processed, the semiconductor wafer to particles that remove charge from the semiconductor wafer and reduce topographically dependent charging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.