Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US6638326B2 · kind B2 · utility
17Cited by
38References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Sep 25, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.