Resist stripping agent and process of producing semiconductor devices using the same
US6638694B2 · kind B2 · utility
33Cited by
9References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 28, 2003 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Feb 28, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A resist stripping agent comprising a specific alkanolamine having at least one functional group represented by the following formula (I): wherein R1 and R2 are each hydrogen atom, C1-C8 alkyl or C1-C8 alkenyl. The resist stripping agent easily and efficiently removes resist films and resist residues remaining after etching or after ashing subsequent to etching in manufacturing semiconductor devices at low temperatures in short period of time. The resist stripping agent is resistant to corrosion against materials for substrate, circuits and insulating films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.