Patent · US Expired

Method of making resistive memory elements with reduced roughness

US6638774B2 · kind B2 · utility

10Cited by

11References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventor

Wolfgang Raberg · Sauerlach, DE

Key dates

Filing date	Jan 15, 2002
Grant date	Oct 28, 2003
Priority date	—
Expiry date	Jan 15, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/161
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A resistive memory element (144), magnetic random access memory (MRAM) device, and methods of manufacturing thereof, wherein a thin oxide layer (132) is disposed within the first metal layer (136) of the memory element (144). The thin oxide layer (132) comprises an oxygen mono-layer. The roughness of subsequently-formed layers (134/118/116) is reduced, and magnetic capabilities of the resistive memory element (144) are enhanced by the use of the thin oxide layer (132) within the first metal layer (136).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.