Patent · US Expired

Method for producing an insulation

US6638814B1 · kind B1 · utility

3Cited by

4References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albrecht Kieslich · Radebeul, DE
Klaus Feldner · Dresden, DE
Herbert Benzinger · Birkenfeld, DE

Key dates

Filing date	Jan 23, 2002
Grant date	Oct 28, 2003
Priority date	—
Expiry date	Jan 23, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/37
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a semiconductor device having a first region with storage capacitors and a second region with at least one well surrounded by an insulation. The method creates both the storage capacitors and the insulation by forming trenches in the first region and at least one trench in the second region, and the trenches have a depth of at least 2 &mgr;m. The trenches in the first region are treated to provide first and second electrodes separated by a dielectric to form the capacitors and each trench in the second region provides an insulation which surrounds any wells in the second region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.