Method of fabricating a dynamic random access memory with increased capacitance
US6638818B1 · kind B1 · utility
1Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Oct 4, 1996 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Aug 4, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
Abstract
A method for forming a dynamic random access memory with increased capacitance includes preparing (36) ultra-fine particles in a microemulsion. The particles are deposited (38) on the lower electrode layer of the memory cell. A micro-villus pattern is then formed (40) on the lower electrode layer, using the particles as a mask. A layer of HSG polysilicon may then be deposited (42) on the micro-villus pattern. A dielectric and upper electrode are then formed (44) overlying the lower electrode to form a storage capacitor for the dynamic random access memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.