Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device
US6638846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Sep 13, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A ZnO based oxide semiconductor layer is grown on a sapphire substrate 1 by supplying, for example, raw materials made of Zn and O constituting ZnO and a p-type dopant material made of N without supplying an n-type dopant material (a-step). By stopping the supply of the material of O and further supplying an n-type dopant material made of Ga, the semiconductor layer is doped with the p-type dopant and the n-type dopant, thereby forming a p-type ZnO layer (2a) (b-step). By repeating the steps (a) and (b) plural times, a p-type ZnO based oxide semiconductor layer is grown. As a result, N to be the p-type dopant can be doped in a stable carrier concentration also during high temperature growth in which a residual carrier concentration can be reduced, and the carrier concentration of the p-type layer made of the ZnO based oxide semiconductor can be increased sufficiently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.