Patent · US Expired

Forming a structure on a wafer

US6638870B2 · kind B2 · utility

13Cited by

4References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Axel Brintzinger · Fishkill, US
Barbara Vasquez · Austin, US
Harry Hedler · Germering, DE

Key dates

Filing date	Jan 10, 2002
Grant date	Oct 28, 2003
Priority date	—
Expiry date	Jan 10, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a structure on an integrated circuit (IC) wafer, includes providing a material onto a surface of the wafer and shaping the material to have a shape corresponding to the structure. The method can also include removing a remaining portion of the material, depositing a seed layer onto the wafer and the material, and depositing a photoresist on the wafer. In addition, the method can include depositing a metal layer on top of the seed layer, removing the photoresist, etching the seed layer, and etching the material. The resulting structure is usable as a compression stop, a compliant element or a rerouting layer or a combination thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.