Method for forming openings in low dielectric constant material layer
US6638871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Apr 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is directed towards a method for forming openings in low-k dielectric layers. A cap layer, a low-k dielectric layer, a metal hard mask layer and a hard mask layer are formed in sequence on a provided substrate with metal wires. After patterning the metal hard mask layer and the hard mask layer to form a first opening, a fluid filling material layer is formed on the hard mask layer and fills the first opening. Using a patterned photoresist layer as a mask to define the filling material layer and the low-k dielectric layer, a second opening is obtained. After removing the photoresist layer along with the filling material layer, a damascene opening is formed by using the metal hard mask and the hard mask layers as a mask and the cap layer as an etching stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.