Tong-Yu Chen
58Patents
12h-index
99Co-inventors
87Inventor score
Filing activity: Oct 10, 1996 → Sep 10, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6828663B2 | Method of packaging a device with a lead frame, and an apparatus formed therefrom | Electricity | 72 | Expired |
| US5798427A | Ethylene polymers having enhanced processability | Emerging Cross-Sectional Technologies | 71 | Expired |
| US6159617A | Ethylene polymers having superior clarity enhanced toughness, low extractables, and processing ease | Emerging Cross-Sectional Technologies | 63 | Expired |
| US6184142A | Process for low k organic dielectric film etch | Electricity | 49 | Expired |
| US6426298B1 | Method of patterning a dual damascene | Electricity | 24 | Expired |
| US6638871B2 | Method for forming openings in low dielectric constant material layer | Electricity | 21 | Expired |
| US6559004B1 | Method for forming three dimensional semiconductor structure and three dimensional capacitor | Electricity | 21 | Expired |
| US6352938B2 | Method of removing photoresist and reducing native oxide in dual damascene copper process | Electricity | 16 | Expired |
| US6750129B2 | Process for forming fusible links | Electricity | 16 | Expired |
| US6507110B1 | Microwave device and method for making same | Electricity | 15 | Expired |
| US6379574B1 | Integrated post-etch treatment for a dielectric etch process | Electricity | 15 | Expired |
| US6285254A | System and method for linearizing vacuum electronic amplification | Electricity | 12 | Expired |
| US6010968A | Method for forming a contact opening with multilevel etching | Electricity | 11 | Expired |
| US6083845A | Etching method | Electricity | 11 | Expired |
| US8426283B1 | Method of fabricating a double-gate transistor and a tri-gate transistor on a common substrate | Electricity | 11 | Active |
| US6221772A | Method of cleaning the polymer from within holes on a semiconductor wafer | Chemistry; Metallurgy | 11 | Expired |
| US8339584B2 | Velocity measuring system | Physics | 10 | Active |
| US6528428B1 | Method of forming dual damascene structure | Electricity | 6 | Expired |
| US6139702A | Seasoning process for etcher | Electricity | 6 | Expired |
| US6590450B2 | System and method for linearizing vacuum electronic amplification | Electricity | 6 | Expired |
| US6218084A | Method for removing photoresist layer | Electricity | 6 | Expired |
| US8698199B2 | FinFET structure | Electricity | 5 | Active |
| US6147007A | Method for forming a contact hole on a semiconductor wafer | Electricity | 5 | Expired |
| US6281316A | Enhanced crosslinking terpolymer | Emerging Cross-Sectional Technologies | 5 | Expired |
| US9048285B2 | Semiconductor structure and method of forming a harmonic-effect-suppression structure | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.