Method of forming dielectric films
US6638876B2 · kind B2 · utility
71Cited by
24References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Dec 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.