Pyrazolate copper complexes, and MOCVD of copper using same
US6639080B2 · kind B2 · utility
10Cited by
15References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 1, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Feb 1, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/0803
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.