Power MOSFET with ultra-deep base and reduced on resistance
US6639276B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jul 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device formed of a substrate of a first conductivity type, an epitaxial layer of a first conductivity type formed on a surface of the substrate, a plurality of lightly doped spaced base regions of a second conductivity type formed to a first predetermined depth in the epitaxial layer with common conduction regions between the base regions, a plurality of highly doped source regions of the first conductivity type formed in the lightly doped base regions, invertible channel regions disposed between the source regions and the common conduction regions, deep implanted junctions of the second conductivity type formed in the epitaxial layer under the base regions extending between the first predetermined depth and a second predetermined depth, gate electrodes insulated from the invertible channels by an insulation layer formed over the invertible channels, and thick insulation spacers disposed over at least a portion of the common conduction regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.