Inventor · Torrance, CA, US

Jianjun Cao

63Patents
11h-index
56Co-inventors
81Inventor score

Filing activity: Nov 20, 2000 → Feb 15, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6640144B1 System and method for creating a controlling device Physics 107 Expired
US6785579B2 System and method for creating a controlling device Physics 88 Expired
US6829512B2 System and method for creating a controlling device Physics 87 Expired
US8823012B2 Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same Electricity 27 Active
US7075147B2 Low on resistance power MOSFET with variably spaced trenches and offset contacts Electricity 22 Expired
US8404508B2 Enhancement mode GaN HEMT device and method for fabricating the same Electricity 20 Active
USRE39716E1 System and method for creating a controlling device General 19 Expired
US7161208B2 Trench mosfet with field relief feature Electricity 15 Expired
US8436398B2 Back diffusion suppression structures Electricity 15 Active
US7579650B2 Termination design for deep source electrode MOSFET Electricity 12 Active
US8338861B2 III-nitride semiconductor device with stepped gate trench and process for its manufacture Electricity 12 Active
US8890168B2 Enhancement mode GaN HEMT device Electricity 11 Active
US8350294B2 Compensated gate MISFET and method for fabricating the same Electricity 10 Active
US9607876B2 Semiconductor devices with back surface isolation Electricity 8 Active
US8853749B2 Ion implanted and self aligned gate structure for GaN transistors Electricity 7 Active
US6563197B1 MOSgated device termination with guard rings under field plate Electricity 7 Expired
US9214461B2 GaN transistors with polysilicon layers for creating additional components Electricity 7 Active
US9837438B2 GaN transistors with polysilicon layers used for creating additional components Electricity 6 Active
US10312131B2 Semiconductor devices with back surface isolation Electricity 6 Active
US9171911B2 Isolation structure in gallium nitride devices and integrated circuits Electricity 6 Active
US7679111B2 Termination structure for a power semiconductor device Electricity 6 Active
US6639276B2 Power MOSFET with ultra-deep base and reduced on resistance Electricity 6 Expired
US7482654B2 MOSgated power semiconductor device with source field electrode Electricity 5 Expired
US7619280B2 Current sense trench type MOSFET with improved accuracy and ESD withstand capability Electricity 5 Expired
US7973304B2 III-nitride semiconductor device Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.