Semiconductor integrated circuit having an integrated resistance region
US6639300B2 · kind B2 · utility
1Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 1, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Feb 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A semiconductor integrated circuit device comprises an active device and a resistance element formed monolithically on a common substrate wherein the resistance element includes a dummy pattern having a layered structure identical with a layered structure of the active device, and first and second electrodes are provided inside a mesa structure provided for the resistance element with a separation from a sidewall of the mesa structure, the first and second electrodes being formed in correspondence to openings formed in the dummy pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.