Method and apparatus for detecting processing faults using scatterometry measurements
US6639663B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Dec 12, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for characterizing a misprocessed wafer includes providing a wafer having a grating structure; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to generate a reflection profile; and characterizing a misprocessed condition of the wafer based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grating structure. The detector is adapted to measure light reflected from the grating structure to generate a reflection profile. The data processing unit is adapted to characterize a misprocessed condition of the wafer based on the reflection profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.