Sensing method for EEPROM refresh scheme
US6639839B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | May 21, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for determining the necessity for refreshing memory cells of a flash memory that includes providing a first reference memory cell, measuring a current of the first reference memory cell, providing a second reference memory cell, measuring a current of the second reference memory cell, measuring a cell current of one of the memory cells of the flash memory, comparing the measured cell current to the current of the first reference memory cell, comparing the measured cell current to the current of the second reference memory cell, and refreshing the memory cell when the measured cell current is greater than the current of the first reference memory cell but less than the current of the second reference memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.