Silicon carbide epitaxial layers grown on substrates offcut towards <1100>
US6641938B2 · kind B2 · utility
7Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2001 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Nov 1, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.