Patent · US Expired

Apparatus for characterization of microelectronic feature quality

US6642063B2 · kind B2 · utility

9Cited by
11References
29Claims
0Family size

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Key dates

Filing dateJun 26, 2002
Grant dateNov 4, 2003
Priority date
Expiry dateJun 26, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Apparatus characterizes the quality of microelectronic features using broadband white light. A highly collimated light source illuminates an area of a first wafer using broadband multi-spectral light. The angular distribution of the light scattered from the first wafer is then measured. Generally, the angle of the light source, detector, or both is altered and an angular distribution measurement taken at each angle, producing a scatter signature for the first wafer. Finally, the scatter signature of the first wafer is compared with a known scatter signature of a second wafer of good quality to determine the quality of the first wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.