Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer
US6642066B1 · kind B1 · utility
64Cited by
11References
21Claims
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Key dates
| Filing date | May 15, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | May 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus and a method of depositing a dielectric material film, including steps of initiating a process of depositing a dielectric material film under at least one controllable initial condition in an apparatus comprising a dielectric material deposition chamber and a spectroscopic ellipsometer; and measuring, by the spectroscopic ellipsometer, at least one ellipsometric parameter of the dielectric material film during the process of depositing the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.