Method of making thermally stable planarizing films

US6642147B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Omer H. Dokumaci · Wappingers Falls, US
• Bruce B. Doris · Brewster, US
• Michael P. Belyansky · Hopewell Junction, US

Key dates

• Filing date: Aug 23, 2001
• Grant date: Nov 4, 2003
• Expiry date: Sep 22, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31056
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a method of protecting semiconductor areas while exposing a structures for processing on a semiconductor surface, the method comprising depositing a planarizing high density plasma film of a silicon compound, selected from the group silicon oxide and silicon nitride, depositing a planarized polymer film to a thickness effective in protecting said high density plasma film while leaving high density plasma excess exposed, and etching away said high density plasma excess.