Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
US6642577B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Mar 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
First and second trenches are formed on an n+ type substrate at a power MOSFET formation region and a peripheral device formation region, respectively. An n− type epitaxial film, a p type epitaxial film, and an n+ type epitaxial film are deposited on the substrate and in the trenches, and then flattening is performed. As a result, an n− type region is provided in the second trench of the peripheral device formation region. Then, a p type well layer is formed in the n− type region by ion-implantation. Accordingly, a power MOSFET and a peripheral device can been formed at the power MOSFET formation region and the peripheral device formation region easily.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.