Attenuated phase shift mask for use in EUV lithography and a method of making such a mask
US6645679B1 · kind B1 · utility
24Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Mar 12, 2001 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Jun 1, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An attenuated phase shift mask utilizes a multilayer which has been locally modified. Heat treatment or e-beam treatment can locally modify the multilayer to provide different reflective characteristics. The attenuated phase shift mask can be utilized in EUV applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.