Control system and methods for photolithographic processes
US6645683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2001 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Dec 8, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the control method for photolithographic processes, line width errors and/or positional errors measured on processed semiconductor wafers are used to calculate correction values for the exposure intensity and/or the xy positioning of the semiconductor wafer. Optimized correction values for a subsequent batch of semiconductor wafers to be processed are calculated by averaging correction values over a number of previously calculated correction values. Only those correction values which lie within a predetermined value range are used in the average.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.