Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel window

US6645812B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Peter Wawer · Dresden, DE
• Oliver Springmann · Dresden, DE
• Konrad Wolf · Walzbachtal, DE
• Olaf Heitzsch · Coswig, DE
• Kai Huckels · Wolfsburg, DE
• Reinhold Rennekamp · Dresden, DE
• Mayk Röhrich · Görlitz, DE
• Elard Stein Von Kamienski · Dresden, DE
• Christoph Kutter · Munich, DE
• Christoph Ludwig · Radeberg, DE

Key dates

• Filing date: Dec 28, 2001
• Grant date: Nov 11, 2003
• Expiry date: Jan 22, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/683

Abstract

A method for producing a non-volatile semiconductor memory cell with a separate tunnel window cell includes the step of forming a tunnel zone in a late implantation step by performing a tunnel implantation with the aid of a tunnel window cell as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.