Semiconductor device and manufacturing method thereof
US6645859B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 14, 2002 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Jun 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.