MOSFET having a double gate
US6646307B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2002 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Feb 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
Abstract
A double gate MOSFET. The MOSFET includes a bottom gate electrode and a bottom gate dielectric disposed over the bottom gate electrode. A semiconductor body region is disposed over the bottom gate dielectric and the bottom gate electrode, and disposed between a source and a drain. A top gate electrode is disposed over the body. A top gate dielectric separates the top gate electrode and the body, the top gate electrode and the bottom gate electrode defining a channel within the body and interposed between the source and the drain. At least one of the bottom gate dielectric or the top gate dielectric is formed from a high-K material. A method of forming a double gate MOSFET is also disclosed where a semiconductor film used to form a body is recrystallized using a semiconductor substrate as a seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.