Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield
US6649021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Jul 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.