Patent · US Expired

Method for manufacturing a lithographic reticle for transferring an integrated circuit design to a semiconductor wafer

US6649452B2 · kind B2 · utility

6Cited by
15References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 28, 2002
Grant dateNov 18, 2003
Priority date
Expiry dateFeb 28, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/36
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A lithographic reticle with subresolution features in the design-pattern is used to control critical dimensions in a semiconductor manufacturing process. After the location of design and processing features is determined, subresolution features are formed in areas devoid of design and processing features. The subresolution features can substantially fill all of the area devoid of design processing features or, instead, selectively fill portions of the area. In one embodiment, the width of the area devoid of design and processing features is less than two times the width of a feature. The presence of the subresolution features results in improved control of small dimensions of features in semiconductor processing, thereby increasing yield and device performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.